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Tokyo Institute of Technology, Japan
Nobuhiko Nishiyama was born in Yamaguchi Prefecture, Japan, in 1974. He received B.E., M.E. and Ph.D. degrees from the Tokyo Institute of Technology, in 1997, 1999 and 2001, respectively. During his Ph.D. work, he demonstrated single-mode 0.98 and 1.1 µm VCSEL arrays with stable polarization using misoriented substrates for high-speed optical networks as well as MOCVD-grown GaInNAs VCSELs. He joined Corning Incorporated, NY in 2001 and worked with the Semiconductor Technology Research Group. At Corning Inc., he worked on several subjects including short-wavelength lasers, 1060-nm DFB/DBR lasers, and long-wavelength InP-based VCSELs, demonstrating state-of-the-art results such as 10-Gbit/s isolator-free and high-temperature operation of long-wavelength VCSELs. Since 2006, he has been an associate professor at the Tokyo Institute of Technology. Currently, his main interests are focused on laser transistors, silicon-photonics, III-V silicon hybrid optical devices, and THz-optical signal conversions involving optics-electronics-radio integration circuits.
He received an Excellent Paper Award from the Institute of Electronics, Information and Communication Engineers (IEICE) of Japan in 2001 and the Young Scientists Prize in the Commendation for Science and Technology from the Minister of Education, Culture, Sports, Science and Technology in 2009.
Dr. Nishiyama is a vice-chair of IEICE technical group on Silicon photonics (2010-2012), a member of the Japan Society of Applied Physics, IEICE, and IEEE Photonics Society.